unisonic technologies co., ltd mmbta44/45 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2010 unisonic technologies co., ltd. qw-r206-007.f high voltage transistors ? features *collector-emitter voltage: v ceo =400v (utc mmbta44 ) v ceo =350v (utc mmbta45 ) *collector current up to 300ma *complement to utc mmbta94/93 *power dissipation: p d (max)=350mw sot-23 (jedec to-236) 1 3 2 ? ordering information ordering number package pin assignment packing 1 2 3 mmbta44g-ae3-r sot-23 e b c tape reel mmbta45g-ae3-r sot-23 e b c tape reel note: pin assignment: e: emi tter b: base c: collector ? markings mmbta44 mmbta45
mmbta44/45 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r206-007.f ? absolute maximum ratings parameter symbol ratings unit collector-base voltage mmbta44 v cbo 500 v mmbta45 400 v collector-emitter voltage mmbta44 v ceo 400 v mmbta45 350 v emitter-base voltage v ebo 6 v collector current i c 300 ma power dissipation t a =25c p d 350 mw t c =25c 1.5 w junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage mmbta44 bv cbo i c =100 a, i b =0 500 v mmbta45 400 v collector-emitter breakdown voltage mmbta44 bv ceo i c =1ma, i b =0 400 v mmbta45 350 v emitter-base breakdown voltage bv ebo i e =100 a, i c =0 6 v collector-emitter satu ration voltage v ce(sat) i c =1ma, i b =0.1ma 0.4 v i c =10ma, i b =1ma 0.5 v i c =50ma, i b =5ma 0.75 v base-emitter satura tion voltage v be(sat) i c 10ma, i b =1ma 0.75 v collector cut-off current mmbta44 i cbo v cb =400v, i e =0 0.1 a mmbta45 v cb =320v, i e =0 0.1 a collector cut-off current mmbta44 i ces v ce =400v, i b =0 0.5 a mmbta45 v ce =320v, i b =0 0.5 a emitter cut-off current i ebo v eb =4v, i c =0 0.1 a dc current gain (note) h fe1 v ce =10v, i c =1ma 40 h fe2 v ce =10v, i c =10ma 50 240 h fe3 v ce =10v, i c =50ma 45 h fe4 v ce =10v, i c =100ma 40 current gain bandwidth product f t v ce =20v, i c =10ma f=100mhz 50 mhz output capacitance c ob v cb =20v, i e =0, f=1mhz 7 pf note: pulse test: p w < 300 s, duty cycle < 2%
mmbta44/45 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r206-007.f ? typical characteristics
mmbta44/45 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r206-007.f ? typical characteristics(cont.) collector current, i c (ma) collector voltage(v) 10 1 10 2 10 3 10 0 10 -1 10 2 10 3 10 4 10 1 10 0 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 safe operating area v ce =10 v f=10mhz ta = 25c 10 4 valid duty cycle <10 % 1s 1ms 0.1ms mpsa 44 t a = 2 5 c t a = 2 5 c small signal current gain, h fe high frequency current gain collector current, i c (ma) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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